Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 99A (Tc)
Rds On (Max) @ Id, Vgs 4 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA
Gate Charge (Qg) @ Vgs 21.3nC @ 4.5V
Input Capacitance (Ciss) @ Vds 2601pF @ 12V
Power - Max 46.4W
Mounting Type Surface Mount
Package / Case SC-100, SOT-669, 4-LFPAK