Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Rds On (Max) @ Id, Vgs 2.65 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) @ Vgs 48.5nC @ 4.5V
Input Capacitance (Ciss) @ Vds 4457pF @ 10V
Power - Max 62.5W
Mounting Type Surface Mount
Package / Case SC-100, SOT-669, 4-LFPAK