Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Rds On (Max) @ Id, Vgs 1.7 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA
Gate Charge (Qg) @ Vgs 77.9nC @ 10V
Input Capacitance (Ciss) @ Vds 5057pF @ 12V
Power - Max 109W
Mounting Type Surface Mount
Package / Case SC-100, SOT-669, 4-LFPAK