Transistors - Bipolar (BJT) -Single & Arrays,NPN, PNP,6.7A, 5.9A,60V
Specification
Transistor Type NPN, PNP
Current - Collector (Ic) (Max) 6.7A, 5.9A
Voltage - Collector Emitter Breakdown (Max) 60V
Vce Saturation (Max) @ Ib, Ic 350mV @ 350mA, 7A / 275mV @ 400mA, 4A
Current - Collector Cutoff (Max) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 4A, 2V / 150 @ 2A, 2V
Power - Max 2.3W
Frequency - Transition 130MHz, 110MHz
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)