Transistors - Bipolar (BJT) -Single & Arrays,NPN - Pre-Biased,250mW
Specification
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 600mA
Voltage - Collector Emitter Breakdown (Max) 40V
Vce Saturation (Max) @ Ib, Ic 1.15V @ 8mA, 800mA
Current - Collector Cutoff (Max) 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 300mA, 5V
Power - Max 250mW
Frequency - Transition -
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3