Transistors - Bipolar (BJT) -Single & Arrays,1 NPN Pre-Biased, 1 PNP,100mA, 500mA,50V, 40V
Specification
Transistor Type 1 NPN Pre-Biased, 1 PNP
Current - Collector (Ic) (Max) 100mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 50V, 40V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA, 5V / 150 @ 100mA, 2V
Power - Max 300mW
Frequency - Transition 300MHz
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666