Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 230mA (Ta)
Rds On (Max) @ Id, Vgs 4.1 Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA
Gate Charge (Qg) @ Vgs 0.72nC @ 4.5V
Input Capacitance (Ciss) @ Vds 46pF @ 15V
Power - Max 350mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3