Junction Field Effect Transistors,30V,400mW
Specification
FET Type P-Channel
Voltage - Breakdown (V(BR)GSS) 30V
Drain to Source Voltage (Vdss) 30V
Current - Drain (Idss) @ Vds 2mA @ 15V
Current Drain (Id) -
Voltage - Cutoff (VGS off) @ Id 1V @ 10nA
Power - Max 400mW
Input Capacitance (Ciss) @ Vds 8pF @ 10V (VGS)
Resistance - RDS(On) 250 Ohm
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads