Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 3.5A
Rds On (Max) @ Id, Vgs 80 mOhm @ 5A, 5V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) @ Vgs -
Input Capacitance (Ciss) @ Vds 650pF @ 25V
Power - Max 1.8W
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA