Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 31A (Ta)
Rds On (Max) @ Id, Vgs 36 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Gate Charge (Qg) @ Vgs 22.8nC @ 5V
Input Capacitance (Ciss) @ Vds 2681pF @ 25V
Power - Max 96W
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB