Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 100A (Ta)
Rds On (Max) @ Id, Vgs 4.8 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) @ Vgs 73.1nC @ 10V
Input Capacitance (Ciss) @ Vds 5520pF @ 25V
Power - Max 238W
Mounting Type Surface Mount
Package / Case SC-100, SOT-669, 4-LFPAK