Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 47.4A (Tc)
Rds On (Max) @ Id, Vgs 18 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) @ Vgs 21.9nC @ 10V
Input Capacitance (Ciss) @ Vds 1263pF @ 25V
Power - Max 85W
Mounting Type Surface Mount
Package / Case SC-100, SOT-669, 4-LFPAK