Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 190mA
Rds On (Max) @ Id, Vgs 10 Ohm @ 150mA, 5V
Vgs(th) (Max) @ Id 3.5V @ 1mA
Gate Charge (Qg) @ Vgs -
Input Capacitance (Ciss) @ Vds 40pF @ 10V
Power - Max 830mW
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)