Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 50V
Current - Continuous Drain (Id) @ 25°C 230mA (Ta)
Rds On (Max) @ Id, Vgs 7.5 Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA
Gate Charge (Qg) @ Vgs 0.35nC @ 5V
Input Capacitance (Ciss) @ Vds 36pF @ 25V
Power - Max 360mW
Mounting Type Surface Mount
Package / Case 3-XFDFN