MOSFET, P, -50V, 0.13A, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-130mA; Drain Source Voltage Vds:50V; On Resistance Rds(on):6ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2V; Power Dissipation Pd:250mW; Transistor Case Style:SOT-23; No. of Pins:3; Operating Te
Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 50V
Current - Continuous Drain (Id) @ 25°C 130mA (Ta)
Rds On (Max) @ Id, Vgs 10 Ohm @ 130mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) @ Vgs -
Input Capacitance (Ciss) @ Vds 45pF @ 25V
Power - Max 250mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3