Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 3A
Rds On (Max) @ Id, Vgs 250 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA
Gate Charge (Qg) @ Vgs 25nC @ 10V
Input Capacitance (Ciss) @ Vds 250pF @ 20V
Power - Max 1.65W
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA