Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 3.2A
Rds On (Max) @ Id, Vgs 100 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA
Gate Charge (Qg) @ Vgs 6nC @ 10V
Input Capacitance (Ciss) @ Vds 250pF @ 20V
Power - Max 8.3W
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA