MOSFET, N CH, 50V, 0.173A, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:173mA; Drain Source Voltage Vds:50V; On Resistance Rds(on):2.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power Dissipation Pd:830mW; Transistor Case Style:TO-236AB; No. of Pins:3; Operating
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 50V
Current - Continuous Drain (Id) @ 25°C 173mA (Ta)
Rds On (Max) @ Id, Vgs 15 Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id 1V @ 1mA
Gate Charge (Qg) @ Vgs -
Input Capacitance (Ciss) @ Vds 25pF @ 10V
Power - Max 830mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3