MOSFET P-CH 12V 1.52A SOT457; Transistor Polarity:P Channel; Continuous Drain Current Id:-1A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):120mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-600mV; Power Dissipation Pd:417mW; Transistor Case Style:SOT-457; No. of Pins:6; Operatin
Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 1.52A (Ta)
Rds On (Max) @ Id, Vgs 120 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 600mV @ 1mA
Gate Charge (Qg) @ Vgs 8.8nC @ 4.5V
Input Capacitance (Ciss) @ Vds 500pF @ 9.6V
Power - Max 417mW
Mounting Type Surface Mount
Package / Case SC-74, SOT-457