MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:335mA; Drain Source Voltage Vds:55V; On Resistance Rds(on):2.3ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Dissipation Pd:830mW; Transistor Case Style:TO-236AB; No. of Pins:3; Operating Temperature M
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 335mA (Ta)
Rds On (Max) @ Id, Vgs 4 Ohm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 1.3V @ 1mA
Gate Charge (Qg) @ Vgs 1nC @ 8V
Input Capacitance (Ciss) @ Vds 40pF @ 10V
Power - Max 830mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3