Specification
FET Type N-Channel
Voltage - Breakdown (V(BR)GSS) -
Drain to Source Voltage (Vdss) 25V
Current - Drain (Idss) @ Vds 200µA @ 10V
Current Drain (Id) 10mA
Voltage - Cutoff (VGS off) @ Id 1.2V @ 0.5nA
Power - Max 250mW
Input Capacitance (Ciss) @ Vds 5pF @ 10V
Resistance - RDS(On) -
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3