MOSFET,N CH,60V,0.36A,SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:360mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.75V; Power Dissipation Pd:420mW; Transistor Case Style:SOT-23; No. of Pins:3; Operating Tempe
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 360mA (Ta)
Rds On (Max) @ Id, Vgs 1.6 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) @ Vgs 0.8nC @ 4.5V
Input Capacitance (Ciss) @ Vds 50pF @ 10V
Power - Max 350mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3