Specification
FET Type MOSFET N-Channel, Schottky, Metal Oxide
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 53A (Tc)
Rds On (Max) @ Id, Vgs 70 mOhm @ 25.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1.72mA
Gate Charge (Qg) @ Vgs 154nC @ 10V
Input Capacitance (Ciss) @ Vds 4020pF @ 25V
Power - Max 417W
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB