Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Rds On (Max) @ Id, Vgs 3 Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) @ Vgs 34nC @ 10V
Input Capacitance (Ciss) @ Vds 694pF @ 25V
Power - Max 139W
Mounting Type Through Hole
Package / Case TO-220-3