Transistors - Bipolar (BJT) -Single & Arrays,4 NPN (Quad),800mA,50V
Specification
Transistor Type 4 NPN (Quad)
Current - Collector (Ic) (Max) 800mA
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Current - Collector Cutoff (Max) 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 75 @ 1mA, 10V
Power - Max 1.5W
Frequency - Transition -
Mounting Type Through Hole
Package / Case 14-DIP (0.300", 7.62mm)