Junction Field Effect Transistors,30V,360mW
Specification
FET Type N-Channel
Voltage - Breakdown (V(BR)GSS) 30V
Drain to Source Voltage (Vdss) 30V
Current - Drain (Idss) @ Vds 175mA @ 15V
Current Drain (Id) -
Voltage - Cutoff (VGS off) @ Id 10V @ 500pA
Power - Max 360mW
Input Capacitance (Ciss) @ Vds 18pF @ 10V (VGS)
Resistance - RDS(On) 25 Ohm
Mounting Type Through Hole
Package / Case TO-206AA, TO-18-3 Metal Can