Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 2.25A (Tc)
Rds On (Max) @ Id, Vgs 1.5 Ohm @ 1.5A, 0V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 8.6nC @ 10V
Input Capacitance (Ciss) @ Vds -
Power - Max 800mW
Mounting Type -
Package / Case -