Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 415V
Current - Continuous Drain (Id) @ 25°C 5mA (Ta)
Rds On (Max) @ Id, Vgs 14 Ohm @ 50mA, 350mV
Vgs(th) (Max) @ Id -
Gate Charge (Qg) @ Vgs -
Input Capacitance (Ciss) @ Vds 300pF @ 0V
Power - Max 2.5W
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA