Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 280A (Tc)
Rds On (Max) @ Id, Vgs 3.2 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 200nC @ 10V
Input Capacitance (Ciss) @ Vds 9700pF @ 25V
Power - Max 550W
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3