Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 68A (Tc)
Rds On (Max) @ Id, Vgs 55 mOhm @ 34A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 380nC @ 10V
Input Capacitance (Ciss) @ Vds 33400pF @ 25V
Power - Max 568W
Mounting Type Through Hole
Package / Case TO-247-3