Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 150V
Current - Continuous Drain (Id) @ 25°C 44A
Rds On (Max) @ Id, Vgs 65 mOhm @ 22A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 175nC @ 10V
Input Capacitance (Ciss) @ Vds 13.4nF @ 25V
Power - Max 298W
Mounting Type Surface Mount
Package / Case TO-263-4, D²Pak (3 Leads + Tab), TO-263AA