Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 2500V (2.5kV)
Current - Continuous Drain (Id) @ 25°C 200mA (Tc)
Rds On (Max) @ Id, Vgs 450 Ohm @ 50mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) @ Vgs 7.4nC @ 10V
Input Capacitance (Ciss) @ Vds 116pF @ 25V
Power - Max 83W
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB