Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 150A (Tc)
Rds On (Max) @ Id, Vgs 15 mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 5V @ 4mA
Gate Charge (Qg) @ Vgs 177nC @ 10V
Input Capacitance (Ciss) @ Vds 11700pF @ 25V
Power - Max 890W
Mounting Type Surface Mount
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA