Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C 12.5A (Tc)
Rds On (Max) @ Id, Vgs 900 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 4mA
Gate Charge (Qg) @ Vgs 155nC @ 10V
Input Capacitance (Ciss) @ Vds 4000pF @ 25V
Power - Max 300W
Mounting Type Surface Mount
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA