Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 63A (Tc)
Rds On (Max) @ Id, Vgs 43 mOhm @ 66A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Gate Charge (Qg) @ Vgs 250nC @ 10V
Input Capacitance (Ciss) @ Vds 18600pF @ 25V
Power - Max 520W
Mounting Type Through Hole
Package / Case -