Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 900V
Current - Continuous Drain (Id) @ 25°C 250mA (Tc)
Rds On (Max) @ Id, Vgs 80 Ohm @ 50mA, 10V
Vgs(th) (Max) @ Id 5V @ 25µA
Gate Charge (Qg) @ Vgs 7.5nC @ 10V
Input Capacitance (Ciss) @ Vds 133pF @ 25V
Power - Max 40W
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63