MOSFET, P CH, 20V, 4.4A, TSOP6; Transistor Polarity:P Channel; Continuous Drain Current Id:4.4A; Drain Source Voltage Vds:20V; On Resistance Rds(on):65mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:-1.2V; Power Dissipation Pd:2W; Transistor Case Style:TSOP; No. of Pins:6; MSL:MSL 1 - Unl
Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4.4A (Ta)
Rds On (Max) @ Id, Vgs 65 mOhm @ 4.4A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) @ Vgs 15nC @ 4.5V
Input Capacitance (Ciss) @ Vds 1079pF @ 10V
Power - Max 2W
Mounting Type Surface Mount
Package / Case 6-LSOP (0.063", 1.60mm Width)