Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4.4A (Ta)
Rds On (Max) @ Id, Vgs 65 mOhm @ 4.4A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) @ Vgs 15nC @ 4.5V
Input Capacitance (Ciss) @ Vds 1079pF @ 10V
Power - Max 2W
Mounting Type Surface Mount
Package / Case 6-LSOP (0.063", 1.60mm Width)