Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Rds On (Max) @ Id, Vgs 105 mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) @ Vgs 47nC @ 10V
Input Capacitance (Ciss) @ Vds 660pF @ 50V
Power - Max 79W
Mounting Type Through Hole
Package / Case TO-251-3 Long Leads, IPak, TO-251AB