MOSFET, N, 20V, 120A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:20V; On Resistance Rds(on):4.2mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:89W; Transistor Case Style:TO-251AA; No. of Pins:3; Operating Temper
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Rds On (Max) @ Id, Vgs 4 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.45V @ 250µA
Gate Charge (Qg) @ Vgs 31nC @ 4.5V
Input Capacitance (Ciss) @ Vds 2830pF @ 10V
Power - Max 89W
Mounting Type Through Hole
Package / Case TO-251-3 Long Leads, IPak, TO-251AB