Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 55A (Tc)
Rds On (Max) @ Id, Vgs 19 mOhm @ 33A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) @ Vgs 50nC @ 4.5V
Input Capacitance (Ciss) @ Vds 1600pF @ 25V
Power - Max 107W
Mounting Type Through Hole
Package / Case TO-251-3 Long Leads, IPak, TO-251AB