Transistor: N-MOSFET; unipolar; HEXFET; 100V; 190A
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 190A (Tc)
Rds On (Max) @ Id, Vgs 3.9 mOhm @ 110A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) @ Vgs 140nC @ 4.5V
Input Capacitance (Ciss) @ Vds 11490pF @ 50V
Power - Max 370W
Mounting Type Surface Mount
Package / Case TO-263-7, D²Pak (6 Leads + Tab), TO-263CB