Transistor: N-MOSFET; unipolar; HEXFET; 30V; 89A;
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 91A (Tc)
Rds On (Max) @ Id, Vgs 9 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 27nC @ 5V
Input Capacitance (Ciss) @ Vds 2672pF @ 16V
Power - Max 115W
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63