MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 42 Milliohms;ID 26A;D-Pak (TO-252AA);PD 79W
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 26A (Tc)
Rds On (Max) @ Id, Vgs 50 mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) @ Vgs 42nC @ 10V
Input Capacitance (Ciss) @ Vds 740pF @ 50V
Power - Max 79W
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63