Transistor: N-MOSFET; unipolar; HEXFET; 55V; 89A;
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 42A
Rds On (Max) @ Id, Vgs 8 mOhm @ 42A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 66nC @ 5V
Input Capacitance (Ciss) @ Vds 2900pF @ 25V
Power - Max 130W
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63