Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 3.2A (Ta)
Rds On (Max) @ Id, Vgs 100 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) @ Vgs 9.6nC @ 10V
Input Capacitance (Ciss) @ Vds 210pF @ 25V
Power - Max 1.7W
Mounting Type Surface Mount
Package / Case 6-LSOP (0.063", 1.60mm Width)