Transistor: N-MOSFET; unipolar; HEXFET; 20V; 4.2A;
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4.2A (Ta)
Rds On (Max) @ Id, Vgs 45 mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) @ Vgs 12nC @ 5V
Input Capacitance (Ciss) @ Vds 740pF @ 15V
Power - Max 1.25W
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3