Transistor: N-MOSFET; unipolar; 20V; 1.2A; 540mW;
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 1.2A (Ta)
Rds On (Max) @ Id, Vgs 250 mOhm @ 930mA, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250µA
Gate Charge (Qg) @ Vgs 3.9nC @ 4.5V
Input Capacitance (Ciss) @ Vds 110pF @ 15V
Power - Max 540mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Buying Option 1
200
-
INR 82.44
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 16488
Buying Option 2
800
-
INR 125.31
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 100248