Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4.3A (Ta)
Rds On (Max) @ Id, Vgs 54 mOhm @ 4.3A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 10µA
Gate Charge (Qg) @ Vgs 6.9nC @ 4.5V
Input Capacitance (Ciss) @ Vds 570pF @ 16V
Power - Max 1.3W
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3