Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 3.9A (Ta)
Rds On (Max) @ Id, Vgs 45 mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) @ Vgs 14nC @ 5V
Input Capacitance (Ciss) @ Vds 530pF @ 25V
Power - Max 1W
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA